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Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method

Identifieur interne : 000632 ( Main/Repository ); précédent : 000631; suivant : 000633

Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method

Auteurs : RBID : Pascal:13-0192561

Descripteurs français

Pascal (Inist)
- Analyse quantitative, Cathodoluminescence, Composé minéral, Composé ternaire, Nitrure de gallium, Nitrure d'indium, Semiconducteur, Méthode Monte Carlo, Puits quantique, Facette, Faisceau électron, Paire électron trou, Nanostructure, Simulation numérique, Angle incidence, Longueur diffusion(transport), InGaN, GaN, 7860H, 7867D.
Wicri :
- concept : Analyse quantitative, Composé minéral.

English descriptors

KwdEn :
- Cathodoluminescence, Diffusion length, Digital simulation, Electron beams, Electron hole pair, Facet, Gallium nitride, Incidence angle, Indium nitride, Inorganic compounds, Monte Carlo methods, Nanostructures, Quantitative chemical analysis, Quantum wells, Semiconductor materials, Ternary compounds.

Abstract

In this paper, cathodoluminescence from InGaN/GaN single quantum wells grown on the facets of the GaN nano-pyramids has been quantitatively studied by Monte Carlo method. The influence of primary electron beam energy and the nanopyramid angle on generation of electron-hole pairs in individual parts of nanostructure has been studied by Monte Carlo simulations. The evolution of the GaN- and InGaN-related cathodoluminescence spectral lines with primary electron beam energy and angle of incidence has been assessed from the recombination rates in individual parts of the structure and compared with cathodoluminescence spectra measured at various beam energies. The possibility to determine the diffusion length of generated carriers in the structures like InGaN/GaN quantum wells using developed Monte Carlo simulator and CL measurements has been demonstrated.

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Pascal:13-0192561

Le document en format XML

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<front><div type="abstract" xml:lang="en">In this paper, cathodoluminescence from InGaN/GaN single quantum wells grown on the facets of the GaN nano-pyramids has been quantitatively studied by Monte Carlo method. The influence of primary electron beam energy and the nanopyramid angle on generation of electron-hole pairs in individual parts of nanostructure has been studied by Monte Carlo simulations. The evolution of the GaN- and InGaN-related cathodoluminescence spectral lines with primary electron beam energy and angle of incidence has been assessed from the recombination rates in individual parts of the structure and compared with cathodoluminescence spectra measured at various beam energies. The possibility to determine the diffusion length of generated carriers in the structures like InGaN/GaN quantum wells using developed Monte Carlo simulator and CL measurements has been demonstrated.</div>
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Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method

Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method

Descripteurs français

English descriptors

Abstract

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Le document en format XML

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